Electrical resistivity of bismuth implanted into silicon

ELECTRICAL RESISTIVITY OF NpTe

Investigation of tellurium - implanted silicon *

Hall and sheet-resistivity measurements as a function of temperature combined with layer removal have been used to study Si implanted with Teat energies up to 220 keY. At low doses c::S: 4 X l 0 em--'), Te has a donor level with a 140-meV activation energy. The activation energy decreases at higher Te doses and is approximately equal to zero forTe doses<: I 0 cm• At high dose levels, the number...

Preparation and Characterization of Axial Gradient Silicon Carbide Fibers with Sinusoidal Electrical Resistivity

Two types of silicon carbide fibers with sinusoidal electrical resistivity were prepared by using different pyrolysis technology. The relationship between the microstructure and the electrical resistivity of these fibers was investigated and compared. The results indicated that carbon layer was the main conductive phase in the SiC fibers obtained by means of one step pyrolysis, whereas a free c...

Morphology and electrical resistivity of metallic nanostructures

The electrical resistivity r of Au, Al and Cu films prepared by thermal evaporation with thickness range from 3 to 100 nm on glass substrates were studied. The r value was measured and theoretically evaluated by the Fuchs–Sondheimer (F–S), the Mayadas–Shatzkes (M–S), and the combined models. Measured r values in Al films were about seven times minor than for Au and Cu films for the minimum (3 n...

Annealing-related electrical and piezoresistive properties of Band As-implanted LPCVD silicon films

We investigate the electrical properties of polycrystalline silicon thin films implanted with arsenic or boron ions. Two types of post-implantation annealing have been performed on the samples a conventional thermal annealing (CTA) and a rapid thermal annealing (RTA). We find that RTA improves the electrical properties. Measurements of gauge factors have been carried out on both films. We concl...